Fringing field induced current coupling in concentric metal–insulator–semiconductor (MIS) tunnel diodes with ultra-thin oxide

Nanoscale electroresistance properties of all-oxide magneto-electric tunnel junction with ultra-thin barium titanate barrier

Articles you may be interested in Coexistence of four resistance states and exchange bias in La0.6Sr0.4MnO3/BiFeO3/La0.6Sr0.4MnO3 multiferroic tunnel junction Appl. Multiferroicity in manganite/titanate superlattices determined by oxygen pressure-mediated cation defects

Ultra-thin resistive switching oxide layers self-assembled by field-induced oxygen migration (FIOM) technique

High-performance ultra-thin oxide layers are required for various next-generation electronic and optical devices. In particular, ultra-thin resistive switching (RS) oxide layers are expected to become fundamental building blocks of three-dimensional high-density non-volatile memory devices. Until now, special deposition techniques have been introduced for realization of high-quality ultra-thin ...

Ultra - thin Titanium Oxide Films on

Accession #s 00936, 00937,00938 Mo(112), Measured by XPS Technique: XPS Host Material: #00936: Mo(112) Dheeraj Kumar, Ming Shu Chen, and David W. Goodman) single crystal; #00937: Si02 thin film on MO(112); #00938: TiO, thin Texas A&M University, Department of Chemistl)', College Station, Texas 77842-_Wl2 film on SiO,lMo(112) (Received 26 August 2005; accepted II August 2006; published 28 Decemb...

Improved drain current characteristics of tunnel field effect transistor with heterodielectric stacked structure

In this paper, we proposed a 2-D analytical model for electrical characteristics such as surface potential, electric field and drain current of Silicon-on-Insulator Tunnel Field Effect Transistor (SOI TFETs) with a SiO2/High-k stacked gate-oxide structure. By using superposition principle with suitable boundary conditions, the Poisson’s equation has been solved to model the channel r...

Comparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxide-semiconductor field effect transistors